The directionality of current flow most diodes exhibit is sometimes generically called the rectifying property. The most common function of a diode is to allow an electric current to pass in one direction (called the forward biased condition) and to block the current in the opposite direction (the reverse biased condition). Thus, the diode can be thought of as an electronic version of a check valve.
Real diodes do not display such a perfect on-off directionality but have a more complex non-linear electrical characteristic, which depends on the particular type of diode technology. Diodes also have many other functions in which they are not designed to operate in this on-off manner.
Early diodes included “cat’s whisker” crystals and vacuum tube devices (also called thermionic valves). Today the most common diodes are made from semiconductor materials such as silicon or germanium.
History
Although the crystal diode was popularized before the thermionic diode, thermionic and solid state diodes were developed in parallel. The principle of operation of thermionic diodes was discovered by Frederick Guthrie in 1873.[1] The principle of operation of crystal diodes was discovered in 1874 by the German scientist, Karl Ferdinand Braun.[2]
At the time of their invention, such devices were known as rectifiers. In 1919, William Henry Eccles coined the term diode from Greek roots; di means "two", and ode (from ὅδος) means "path".
Principles
Thermionic diode principles were rediscovered by Thomas Edison on February 13, 1880 and he was awarded a patent in 1883 (U.S. Patent 307,031 ), but developed the idea no further. Braun patented the crystal rectifier in 1899.[3] Braun's discovery was further developed by Jagdish Chandra Bose into a useful device for radio detection.
Radio receivers
The first radio receiver using a crystal diode was built by Greenleaf Whittier Pickard. The first thermionic diode was patented in Britain by John Ambrose Fleming (scientific adviser to the Marconi Company and former Edison employee.[4]) on November 16, 1904 (U.S. Patent 803,684 in November 1905). Pickard received a patent for a silicon crystal detector on November 20, 1906[5] (U.S. Patent 836,531 ).
Thermionic and gaseous state diodes
Thermionic diodes are thermionic valve devices (also known as vacuum tubes), which are arrangements of electrodes surrounded by a vacuum within a glass envelope. Early examples were fairly similar in appearance to incandescent light bulbs.
In thermionic valve diodes, a current is passed through the heater filament. This indirectly heats the cathode, another internal electrode treated with a mixture of barium and strontium oxides, which are oxides of alkaline earth metals; these substances are chosen because they have a small work function. (Some valves use direct heating, in which a tungsten filament acts as both heater and cathode.) The heat causes thermionic emission of electrons into the vacuum. In forward operation, a surrounding metal electrode, called the anode, is positively charged, so that it electrostatically attracts the emitted electrons. However, electrons are not easily released from the unheated anode surface when the voltage polarity is reversed and hence any reverse flow is a very tiny current.
For much of the 20th century, thermionic valve diodes were used in analog signal applications, and as rectifiers in many power supplies. Today, valve diodes are only used in niche applications, such as rectifiers in guitar and hi-fi valve amplifiers, and specialized high-voltage equipment.
Semiconductor diodes
Most modern diodes are based on semiconductor p-n junctions. In a p-n diode, conventional current can flow from the p-type side (the anode) to the n-type side (the cathode), but cannot flow in the opposite direction. Another type of semiconductor diode, the Schottky diode, is formed from the contact between a metal and a semiconductor rather than by a p-n junction.
Current–voltage characteristic
A semiconductor diode's current–voltage characteristic, or I–V curve, is related to the transport of carriers through the so-called depletion layer or depletion region that exists at the p-n junction between differing semiconductors. When a p-n junction is first created, conduction band (mobile) electrons from the N-doped region diffuse into the P-doped region where there is a large population of holes (places for electrons in which no electron is present) with which the electrons "recombine". When a mobile electron recombines with a hole, both hole and electron vanish, leaving behind an immobile positively charged donor on the N-side and negatively charged acceptor on the P-side. The region around the p-n junction becomes depleted of charge carriers and thus behaves as an insulator.
However, the depletion width cannot grow without limit. For each electron-hole pair that recombines, a positively-charged dopant ion is left behind in the N-doped region, and a negatively charged dopant ion is left behind in the P-doped region. As recombination proceeds and more ions are created, an increasing electric field develops through the depletion zone which acts to slow and then finally stop recombination. At this point, there is a "built-in" potential across the depletion zone.
If an external voltage is placed across the diode with the same polarity as the built-in potential, the depletion zone continues to act as an insulator, preventing any significant electric current flow. This is the reverse bias phenomenon. However, if the polarity of the external voltage opposes the built-in potential, recombination can once again proceed, resulting in substantial electric current through the p-n junction. For silicon diodes, the built-in potential is approximately 0.6 V. Thus, if an external current is passed through the diode, about 0.6 V will be developed across the diode such that the P-doped region is positive with respect to the N-doped region and the diode is said to be "turned on" as it has a forward bias.
Figure 5: I–V characteristics of a P-N junction diode (not to scale).
A diode’s I–V characteristic can be approximated by four regions of operation (see the figure at right).
At very large reverse bias, beyond the peak inverse voltage or PIV, a process called reverse breakdown occurs which causes a large increase in current that usually damages the device permanently. The avalanche diode is deliberately designed for use in the avalanche region. In the zener diode, the concept of PIV is not applicable. A zener diode contains a heavily doped p-n junction allowing electrons to tunnel from the valence band of the p-type material to the conduction band of the n-type material, such that the reverse voltage is "clamped" to a known value (called the zener voltage), and avalanche does not occur. Both devices, however, do have a limit to the maximum current and power in the clamped reverse voltage region. Also, following the end of forward conduction in any diode, there is reverse current for a short time. The device does not attain its full blocking capability until the reverse current ceases.
The second region, at reverse biases more positive than the PIV, has only a very small reverse saturation current. In the reverse bias region for a normal P-N rectifier diode, the current through the device is very low (in the µA range).
The third region is forward but small bias, where only a small forward current is conducted.
As the potential difference is increased above an arbitrarily defined "cut-in voltage" or "on-voltage" or "diode forward voltage drop (Vd)", the diode current becomes appreciable (the level of current considered "appreciable" and the value of cut-in voltage depends on the application), and the diode presents a very low resistance.
The current–voltage curve is exponential. In a normal silicon diode at rated currents, the arbitrary "cut-in" voltage is defined as 0.6 to 0.7 volts. The value is different for other diode types — Schottky diodes can be as low as 0.2 V and red light-emitting diodes (LEDs) can be 1.4 V or more and blue LEDs can be up to 4.0 V.
At higher currents the forward voltage drop of the diode increases. A drop of 1 V to 1.5 V is typical at full rated current for power diodes.
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